Precipitation of oxygen in single-crystal silicon implanted with high doses of oxygen

Abstract Oxygen and defect distributions in Si(100), implanted at 500 °C with 400 keV molecular oxygen ions to achieve a maximum volume concentration of about 10 22 O cm −3 , have been studied by transmission electron microscopy, secondary ion mass spectroscopy and Auger and X-ray photoelectron spectroscopy. On annealing at 1150 °C for 2h, redistribution of the oxygen is observed with SiO 2 precipitates (platelets) nucleating on residual damage to form a simple two-phase (silicon and SiO 2 ) system.