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J. Yu
J. Yu
Samsung
Electronic engineering
Diode
Optoelectronics
Chip
Physics
3
Papers
207
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0.01
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Active Width Modulation (AWM) for cost-effective and highly reliable PRAM
2012
IEDM | International Electron Devices Meeting
Dae-Won Ha
Kwangseok Lee
K. R. Sim
J. Yu
Su Jin Ahn
Sang-Yoon Kim
Taehyun An
Soo-jin Hong
Seung Kyu Kim
J. W. Lee
Byeung-Chul Kim
Gwan-Hyeob Koh
Seo-Woo Nam
Gi-Tae Jeong
Chilhee Chung
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Two-bit cell operation in diode-switch phase change memory cells with 90nm technology
2008
VLSIT | Symposium on VLSI Technology
Dae-Woong Kang
J.H. Lee
Jeong-Taek Kong
Dae-Won Ha
J. Yu
C.Y. Um
J. H. Park
F. Yeung
J.H. Kim
Woon Ik Park
Y.J. Jeon
Mi-Hyang Lee
Y.J. Song
Jae-joon Oh
Gi-Tae Jeong
Hong Sik Jeong
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Citations (95)
Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology
2006
IEDM | International Electron Devices Meeting
Jae-joon Oh
J. H. Park
Y.S. Lim
Hyun-Seok Lim
Y.T. Oh
J.S. Kim
J.M. Shin
Y.J. Song
Kyung-Chang Ryoo
Dong-won Lim
Soonoh Park
Jeong-Seok Kim
Jung-hyeon Kim
J. Yu
F. Yeung
C.W. Jeong
Jeong-Taek Kong
Donghun Kang
Gwan-Hyeob Koh
Gi-Tae Jeong
H.S. Jeong
Kinam Kim
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Citations (111)
1