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Soo-jin Hong

Samsung

24

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213

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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

2020 ISSCC | International Solid-State Circuits Conference
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Bulk planar 20nm high-k/metal gate CMOS technology platform for low power and high performance applications

2011 IEDM | International Electron Devices Meeting
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Transport Study of Lambda DNA Molecules

2007 Journal of the Korean Physical Society
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Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

2006 Japanese Journal of Applied Physics
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Electrode dependence of resistance switching in polycrystalline NiO films

2005 Applied Physics Letters
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Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes

2005 The Japan Society of Applied Physics
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Electrical analysis on the drain current of the ultra shallow junction by laser annealing

2004 ESSCIRC | European Solid-State Circuits Conference
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Ultrathin gate oxide with a reduced transition layer grown by plasma-assisted oxidation

2004 Applied Physics Letters
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Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 ㎚ DRAM

2003 Journal of Semiconductor Technology and Science
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Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

2003 Journal of the Korean Physical Society
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