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Heon-Bok Lee
Heon-Bok Lee
Samsung
Wide-bandgap semiconductor
Electronic engineering
Engineering
Band gap
Schottky diode
3
Papers
4
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Reduction in Shottky barrier height of AlGaN-based SBD with in-situ deposited silicon carbon nitride (SiCN) cap layer
2012
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Jae-Hoon Lee
Young-Sun Kwak
Jae-Hyun Jeong
Heon-Bok Lee
Wantae Lim
Ki-Se Kim
Ki-Won Kim
Dong-Suck Kim
Jung Hee Lee
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Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application
2011
EDSSC | International Conference on Electron Devices and Solid-State Circuits
Young-Jin Kwon
Chang-Ju Lee
Do-Kywn Kim
Heon-Bok Lee
Sung-Ho Hahm
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Characteristics of AlGaN/GaN heterostructure field effect transistor grown on 4 inch Si (111) substrate using formation of dot-like AlSi x C 1−x interlayer
2011
ISDRS | International Semiconductor Device Research Symposium
Jae-Hoon Lee
Young-Sung Kwak
Jae-Hyun Jeong
Wantae Lim
Heon-Bok Lee
Jong-Kyu Ryu
Seung-Bae Hur
Ki-Se Kim
Ki-Won Kim
Dong-Seok Kim
Jung Hee Lee
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