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Seung-Bae Hur
Seung-Bae Hur
Samsung
Analytical chemistry
Materials science
Breakdown voltage
Optoelectronics
Wide-bandgap semiconductor
3
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46
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Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications
2011
Electrochemical and Solid State Letters
Wantae Lim
Jae-Hyun Jeong
Heon-Bok Lee
Jae-Hoon Lee
Seung-Bae Hur
Jong-Kyu Ryu
Ki-Se Kim
Tae-hyung Kim
Sang-Yeob Song
Won-Goo Hur
Sung-tae Kim
S. J. Pearton
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Characteristics of AlGaN/GaN heterostructure field effect transistor grown on 4 inch Si (111) substrate using formation of dot-like AlSi x C 1−x interlayer
2011
ISDRS | International Semiconductor Device Research Symposium
Jae-Hoon Lee
Young-Sung Kwak
Jae-Hyun Jeong
Wantae Lim
Heon-Bok Lee
Jong-Kyu Ryu
Seung-Bae Hur
Ki-Se Kim
Ki-Won Kim
Dong-Seok Kim
Jung Hee Lee
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Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes
2010
Applied Physics Letters
Wantae Lim
Jae-Hyun Jeong
Jae-Hoon Lee
Seung-Bae Hur
Jong-Kyu Ryu
Ki-Se Kim
Tae-hyung Kim
Sang-Yeob Song
Jong-in Yang
S. J. Pearton
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Citations (42)
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