Vertical GaN schottky barrier diode on an N-face GaN layer formed by ELOG and laser-lift-off technique for high-power application

We studied a vertical type GaN schottky barrier diode (SBD) on the laser-lift-off (LLO) GaN layer with top schottky contact metals such as nickel and aluminium. The I-V characteristic was not strongly dependent on the schottky metals and the forward voltage drop was higher than the theoretical value. The C-V characteristic of metal-oxide-semiconductor (MOS) capacitor exhibits from the accumulation to inversion around •10 V. These results suggest that the wide band gap thin film layer remains at the surface of the N-face GaN layer.