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Patrik Príbytný
Patrik Príbytný
Information Technology Institute
Electronic engineering
Materials science
Optoelectronics
Transistor
Band gap
4
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37
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Simulation study of interface traps and bulk traps in n ++ GaN/InAlN/AlN/GaN high electron mobility transistors
2014
Applied Surface Science
Marian Molnar
Daniel Donoval
J. Kuzmik
Juraj Marek
Ales Chvala
Patrik Príbytný
Miroslav Mikolášek
K. Rendek
Vassil Palankovski
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Citations (8)
Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells
2014
Applied Surface Science
Miroslav Mikolášek
Patrik Príbytný
Daniel Donoval
Juraj Marek
Ales Chvala
Marian Molnar
J. Kovac
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Citations (15)
Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations
2014
Solid-state Electronics
Juraj Marek
Ales Chvala
Daniel Donoval
Patrik Príbytný
Marian Molnar
Miroslav Mikolášek
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Citations (14)
MODELING AND CHARACTERIZATION OF IN0.12AL0.88N/GAN HEMTS AT ELEVATED TEMPERATURES
2013
Marian Molnar
Vassil Palankovski
Daniel Donoval
J. Kuzmik
J. Kovac
Ales Chvala
Juraj Marek
Patrik Príbytný
Siegfried Selberherr
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