MODELING AND CHARACTERIZATION OF IN0.12AL0.88N/GAN HEMTS AT ELEVATED TEMPERATURES

Promising material properties of GaN, e.g., wide bandgap, high saturation velocity, and high thermal stability, make it an excellent material for high-power, high-frequency, and high-temperature applications. For some specific applications which require the device to operate at elevated temperatures, modeling and simulation provide very meaningful insights about the thermal device behavior. In this work, the DC device behaviour at 300K and at elevated temperatures is studied, both experimentally and by means of two-dimensional device simulations. Very good agreement between the measurements and the simulation results with Minimos-NT is achieved using the hydrodynamic transport model including self- heating and carefully tuned impact ionization effects.