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K. Rendek
K. Rendek
Optoelectronics
High-electron-mobility transistor
Analytical chemistry
Electron mobility
Transistor
3
Papers
9
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0
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Simulation study of interface traps and bulk traps in n ++ GaN/InAlN/AlN/GaN high electron mobility transistors
2014
Applied Surface Science
Marian Molnar
Daniel Donoval
J. Kuzmik
Juraj Marek
Ales Chvala
Patrik Príbytný
Miroslav Mikolášek
K. Rendek
Vassil Palankovski
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Citations (8)
Relaxation of low-frequency noise in AlGaN/GaN HEMTs
2012
ASDAM | International Conference on Advanced Semiconductor Devices and Microsystems
A. Šatka
K. Rendek
J. Priesol
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Investigation of low-frequency noise in AlGaN HEMT structures under illumination
2011
K. Rendek
A. Šatka
J. Kováč
Daniel Donoval
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