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Jae Yong Seo
Jae Yong Seo
Samsung
Electronic engineering
Engineering
Degradation (geology)
Materials science
Acceleration
6
Papers
9
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Method of deciding burn-in stress voltage in conceptual design phase
2010
IRPS | International Reliability Physics Symposium
Jae Yong Seo
Noh Seok Park
Hyung-Jin Park
Hong-Sik Park
Woo Sup Kim
Se Young Lim
Hyun Kim
Nam Hyun Cha
Ju Seong Kang
Byung Se So
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Citations (2)
Layout dependency of PMOS off current degradation due to off-state stress
2009
IRPS | International Reliability Physics Symposium
Jae Yong Seo
Hong-Sik Park
Sabina Lee
Tae-Hun Kang
Gu Gwan Kang
Byung-Heon Kwak
Won Shik Lee
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Citations (1)
Time-to-Breakdown Behavior and Mechanism on U-grooved n-MOSFET
2009
Jae Yong Seo
Hong-Sik Park
Gu Gwan Kang
Ju Seong Kang
Byung Se So
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Reliability acceleration model of stacked ZrO 2 -Al 2 O 3 -ZrO 2 MIM capacitor with cylinder type
2008
ICM | International Conference on Microelectronics
Jae Yong Seo
Jung Eun Seok
Hyun-Joo Kim
Hyun-Jung Kim
Hong-Sik Park
Jae Eun Jeon
Won Shik Lee
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Citations (3)
Optimization of gate poly TAB size and reliability on short channel pMOSFET
2008
Microelectronics Reliability
Jungeun Seok
Hyun-Joo Kim
Jae Yong Seo
Samjin Hwang
Byung-Heon Kwak
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Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)
2007
Jae Yong Seo
Jeong-Eun Seok
Hyun-Jung Kim
Sang Keun Lee
Jaeeun Jeon
Yeong-Geun Kim
Wonshik Lee
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