Old Web
English
Sign In
Acemap
>
Paper
>
Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)
Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)
2007
Jae Yong Seo
Jeong-Eun Seok
Hyun-Jung Kim
Sang Keun Lee
Jaeeun Jeon
Yeong-Geun Kim
Wonshik Lee
Keywords:
Geophysics
Degradation (geology)
Shallow trench isolation
Geology
Materials science
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI
[]