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Hugo Bender
Hugo Bender
Physics
CMOS
Electronic engineering
Materials science
Optoelectronics
4
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152
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Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors
2014
Journal of Applied Physics
Kuo-Hsing Kao
Anne S. Verhulst
Rita Rooyackers
Bastien Douhard
Joris Delmotte
Hugo Bender
Olivier Richard
Wilfried Vandervorst
Eddy Simoen
Andriy Hikavyy
Roger Loo
Kai Arstila
Nadine Collaert
Aaron Thean
Marc Heyns
Kristin De Meyer
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Citations (15)
Ternary rare-earth metal oxide high-k layers on silicon oxide
2005
Applied Physics Letters
Chao Zhao
Thomas Witters
Bert Brijs
Hugo Bender
O. Richard
Matty Caymax
Tassilo Heeg
Jürgen Schubert
Valeri Afanas'ev
Andre Stesmans
Darrell G. Schlom
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Citations (124)
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