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Joris Delmotte
Joris Delmotte
IMEC
Materials science
Analytical chemistry
Electronic engineering
Annealing (metallurgy)
Crystalline silicon
5
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40
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MBE growth investigations of InxGa1-xAs/GaAsySb1-y systems for TFET performance prediction
2015
Salim El Kazzi
Quentin Smets
Rita Rooyackers
Joris Delmotte
Jef Geypen
Anne S. Verhulst
Nadine Collaert
Marc Heyns
Clement Merckling
Aaron Thean
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Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors
2014
Journal of Applied Physics
Kuo-Hsing Kao
Anne S. Verhulst
Rita Rooyackers
Bastien Douhard
Joris Delmotte
Hugo Bender
Olivier Richard
Wilfried Vandervorst
Eddy Simoen
Andriy Hikavyy
Roger Loo
Kai Arstila
Nadine Collaert
Aaron Thean
Marc Heyns
Kristin De Meyer
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Citations (15)
GeSn channel nMOSFETs: Material potential and technological outlook
2012
VLSIT | Symposium on VLSI Technology
Somya Gupta
Benjamin Vincent
Dennis Lin
Marika Gunji
Andrea Firrincieli
Federica Gencarelli
Blanka Magyari-Köpe
Bin Yang
Bastien Douhard
Joris Delmotte
Alexis Franquet
Matty Caymax
J Dekoster
Yoshio Nishi
Krishna C. Saraswat
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Citations (25)
N-type and p-type ultra shallow junctions by atomic layer epitaxy and laser anneal
2011
Ngoc Duy Nguyen
Laurent Souriau
Yasuo Shimizu
Sijia Jiang
Erik Rosseel
Jean-Luc Everaert
Joris Delmotte
Alain Moussa
Trudo Clarysse
Roger Loo
Wilfried Vandervorst
Matty Caymax
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Depth resolution and surface transients in crystalline Silicon at ultra low energies
2009
Jozefien Goossens
Bart Berghmans
Alexis Franquet
Ngoc Duy Nguyen
Joris Delmotte
Luc Geenen
Olivier Richard
Hugo Bender
Wilfried Vandervorst
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