Old Web
English
Sign In
Acemap
>
authorDetail
>
Daigo Ichinose
Daigo Ichinose
Toshiba
Electronic engineering
Silicon on insulator
Optoelectronics
NAND gate
Transistor
4
Papers
6
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (4)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
Topography simulation of BiCS memory hole etching modeled by elementary experiments of SiO 2 and Si etching
2010
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
Takashi Ichikawa
Daigo Ichinose
Kenji Kawabata
Naoki Tamaoki
Show All
Source
Cite
Save
Citations (5)
Depletion-Type Cell-Transistor on Partial Silicon-on-Insulator Substrate for 2× nm Generation Floating-Gate NAND Electrically Erasable Programmable Read Only Memory
2010
Japanese Journal of Applied Physics
Makoto Mizukami
Kiyohito Nishihara
Hirokazu Ishida
Fumiki Aiso
Tadashi Iguchi
Daigo Ichinose
Atsushi Fukumoto
Nobutoshi Aoki
Masaki Kondo
Takashi Izumida
Hiroyoshi Tanimoto
Toshiyuki Enda
Hiroshi Watanabe
Shuichi Toriyama
Takashi Suzuki
Ichiro Mizushima
Fumitaka Arai
Show All
Source
Cite
Save
Citations (0)
First LSI Applicable Thin SOI Films Formed by Lateral Solid Phase Epitaxy
2009
The Japan Society of Applied Physics
Hirokazu Ishida
Fumiki Aiso
Makoto Mizukami
Kiyohito Nishihara
Tadashi Iguchi
Daigo Ichinose
Atsushi Fukumoto
Takashi Suzuki
Fumitaka Arai
Ichiro Mizushima
Show All
Source
Cite
Save
Citations (0)
Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory
2009
The Japan Society of Applied Physics
Makoto Mizukami
Kiyohito Nishihara
Hirokazu Ishida
Fumiki Aiso
Tadashi Iguchi
Daigo Ichinose
Atsushi Fukumoto
N. Aoki
Masaki Kondo
Takashi Izumida
Hiroyoshi Tanimoto
Toshiyuki Enda
Takashi Suzuki
Ichiro Mizushima
Fumitaka Arai
Show All
Source
Cite
Save
Citations (1)
1