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Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory
Depletion-type Cell-Transistor of 23 nm Cell Size on Partial SOI Substrate for NAND Flash Memory
2009
Makoto Mizukami
Kiyohito Nishihara
Hirokazu Ishida
Fumiki Aiso
Tadashi Iguchi
Daigo Ichinose
Atsushi Fukumoto
N. Aoki
Masaki Kondo
Takashi Izumida
Hiroyoshi Tanimoto
Toshiyuki Enda
Takashi Suzuki
Ichiro Mizushima
Fumitaka Arai
Keywords:
NAND gate
Electronic engineering
Transistor
Silicon on insulator
Substrate (chemistry)
Materials science
Flash memory
cell size
Optoelectronics
Cell
soi substrate
nand flash memory
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