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Y. Arango
Y. Arango
Hitachi
Silicon carbide
Power MOSFET
MOSFET
High-κ dielectric
Threshold voltage
2
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Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetitive Switching Conditions
2021
ISPSD | International Symposium on Power Semiconductor Devices and IC's
S. Wirths
Andrei Mihaila
Gianpaolo Romano
Nick Schneider
Edoardo Ceccarelli
G. Alfieri
Y. Arango
Lars Knoll
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Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High–k Gate Dielectric
2021
ISPSD | International Symposium on Power Semiconductor Devices and IC's
G. Romano
S. Wirths
Andrei Mihaila
Y. Arango
A. Ruiz
Lars Knoll
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