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G. Alfieri
G. Alfieri
Hitachi
Materials science
Conduction band
Molecular physics
dose dependence
Ion
3
Papers
1
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0
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2024
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Deep levels in ion implanted n-type homoepitaxial GaN: Ion mass, tilt angle and dose dependence
2021
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
G. Alfieri
V. K. Sundaramoorthy
Ruggero Micheletto
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Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetitive Switching Conditions
2021
ISPSD | International Symposium on Power Semiconductor Devices and IC's
S. Wirths
Andrei Mihaila
Gianpaolo Romano
Nick Schneider
Edoardo Ceccarelli
G. Alfieri
Y. Arango
Lars Knoll
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Deep level study of chlorine-based dry etched β − Ga2O3
2021
Journal of Applied Physics
G. Alfieri
Andrei Mihaila
Phillippe Godignon
Joel B. Varley
Lasse Vines
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