Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetitive Switching Conditions

SiC power electronics offers several advantages over Si-based technologies in terms of low-loss switching and power conversion efficiency. Especially 1.2kV SiC power MOSFETs are promising candidates to replace Si IGBTs in various applications. However, the SiC/dielectric interface exhibits peculiarities and challenges that prevent the exploitation of the full potential of these devices. This contribution is dedicated to the Time Dependent Dielectric Breakdown (TDDB) of high-k/SiC interfaces as well as to the threshold voltage (V TH ) hysteresis effects under harsh repetitive switching conditions of 1.2kV high-k SiC power MOSFETs, particularly using large negative gate voltage never studied before.