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Sh. A. Mirsagatov

Academy of Sciences of Uzbekistan

64

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111

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Fabrication and Properties of nSi–pCdTe Heterojunctions

2020 Inorganic Materials
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Influence of ultrasonic irradiation on the output parameters of photosensitive In– n + CdS– n CdS x Te 1– x – p Zn x Cd 1– x Te–Mo heterostructure

2016 Applied Solar Energy
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Ultrasonic annealing of surface states in the heterojunction of a p-Si/n-CdS/n+-CdS injection photodiode

2015 Inorganic Materials
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Electrophysical and Photoelectric Properties of Injection Photodiode Based on pSi–nCdS–In Structure and Influence of Ultrasonic Irradiation on them

2015 Journal of Nanoelectronics and Optoelectronics
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Injection photodiode based on a p-Si-n-CdS-n+-CdS structure

2014 Semiconductors
- Sh. A. Mirsagatov
- I. B. Sapayev
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Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

2013 Ukrainian Journal of Physics
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Injection photodiode based on an n-CdS/p-CdTe heterostructure

2013 Semiconductors
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High-efficiency UV photocells based on Zn x Cd1 − x S solid solutions

2012 Applied Solar Energy
- Sh. A. Mirsagatov
- A. A. Mavlonov
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Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

2012 Physics of the Solid State
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Current sensitivity and efficiency of a CdO-pCdTe-Mo structure at low light levels

2011 Applied Solar Energy
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