Current sensitivity and efficiency of a CdO-pCdTe-Mo structure at low light levels

It is shown that the CdO-pCdTe-Mo structure established on the basis of large-block p-type films has a spectral range of photosensitivity of Δλ = 480–830 nm, which fully covers the visible area of solar radiation. It was found that the CdO-pCdTe-Mo structure has a high integral sensitivity of S int = 430–520 mA/lm and a high efficiency of illumination by light of E = 10–100 lx. The anomalous behavior of S int and the efficiency of this structure are explained by an increase in the photocurrent due to redistribution of the potential between the barrier and the series resistance of the structure as a result of illumination.