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Joachim Nuetzel
Joachim Nuetzel
Infineon Technologies
Transistor
Electronic engineering
Optoelectronics
Dram
Capacitor
7
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78
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TrenchDRAM Technologies forthe50nmNodeandBeyond
2010
Wolfgang Mueller
G. Aichmayr
Wolfgang Bergner
Matthias Goldbach
Thomas Hecht
Stephan Kudelka
F. Lau
Joachim Nuetzel
Andreas Orth
Till Schloesser
Arnd Scholz
Alexander Sieck
Andreas Spitzer
Marc Strasser
P.-f. Wand
S. Wege
Rolf Weis
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Trench DRAM Technologies for the 50nm Node and Beyond
2006
VLSI-TSA | International Symposium on VLSI Technology, Systems, and Applications
Wolfgang Mueller
G. Aichmayr
Wolfgang Bergner
Matthias Goldbach
Thomas Hecht
Stephan Kudelka
F. Lau
Joachim Nuetzel
Andreas Orth
Till Schloesser
Arnd Scholz
Alexander Sieck
Andreas Spitzer
Marc Strasser
P.-f. Wand
S. Wege
Rolf Weis
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Citations (5)
Challenges for the DRAM cell scaling to 40nm
2005
IEDM | International Electron Devices Meeting
Wolfgang Mueller
G. Aichmayr
Wolfgang Bergner
Elke Erben
Thomas Hecht
Christian Kapteyn
Alfred Kersch
Stephan Kudelka
F. Lau
Joern Luetzen
Andreas Orth
Joachim Nuetzel
Till Schloesser
Arnd Scholz
Uwe Schroeder
Alexander Sieck
Andreas Spitzer
Marc Strasser
Peng-Fei Wang
S. Wege
Rolf Weis
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Citations (69)
Highly scalable sub-50nm vertical double gate trench DRAM cell
2004
IEDM | International Electron Devices Meeting
Till Schloesser
Dirk Manger
Rolf Weis
Stefan Slesazeck
F. Lau
Stefan Tegen
Michael Sesterhenn
M. Muemmler
Joachim Nuetzel
D. Temmler
B Kowalski
U. Scheler
M. Stavrev
Daniel Koehler
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Citations (4)
Verfahren zum herstellen einer halbleiterspeichereinrichtung
2002
Joachim Nuetzel
Siegfried Schwarzl
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