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Taewoo Lee
Taewoo Lee
Samsung
Electronic engineering
Transistor
Dram
Communication channel
Materials science
3
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1
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0
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Investigation on the local variation in BCAT process for DRAM technology
2017
IRPS | International Reliability Physics Symposium
Sanghyeon Jeon
Jaehyun Choi
Hyuck-Chai Jung
Senyung Kim
Taewoo Lee
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Lateral-Extended (LatEx.) active for improvement of data retention time for sub 60nm DRAM era
2007
ESSDERC | European Solid-State Device Research Conference
S.H. Lee
Jong-Chul Park
Kwang-Woo Lee
Sungho Jang
Junho Lee
Hyunsook Byun
Ilgweon Kim
Yongjin Choi
Myoungseob Shim
Du Heon Song
Joo-Sung Park
Taewoo Lee
Dongho-Shin
Gyo-Young Jin
Kinam Kim
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URCAT (U-shaped-Recess-Channel-Array Transistor) Technology for 60nm DRAM and beyond
2007
The Japan Society of Applied Physics
Chihoon Lee
Jong Dae Park
Soon-yeon Park
Seung-Moo Lee
Sun-Cheol Hong
In-Kyoung Kim
Yun Jung Choi
Taewoo Lee
G. Y. Jin
Kinam Kim
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