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Sheung-Hee Park
Sheung-Hee Park
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Electronic engineering
Memory cell
Flash memory
Limiter
Transistor
2
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1
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2024
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A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology
2011
IMW | International Memory Workshop
Sung-Yong Chung
Simon S. Chan
Kuo-Tung Chang
Bradley Marc Davis
Gulzar Kathawala
K. Ko
Sung-Chul Lee
Zhizheng Liu
Chuan Lin
Kenichi Ohtsuka
Sheung-Hee Park
Timothy Thurgate
Lei Xue
Mark Randolph
Hidehiko Shiraiwa
Y. Sun
C. Chang
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Eliminating Word Line Bending In Floating Gate NOR Flash Memory To Reduce Array Size and Improve Manufacturability
2006
NVMTS | Non-Volatile Memory Technology Symposium
Shenqing Fang
Kuo-Tung Chang
Sung-Chul Lee
Joerg Reiss
Makoto Takahashi
Marina Plat
Siu Ho
Arjun Rangarajan
Wing Leung
Ming Kwan
Sheung-Hee Park
Kelwin Ko
Amol Joshi
Hiro Kinoshita
John Wang
Yu Sun
Kazuhiro Mizutani
Hiroyuki Ogawa
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