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Kenichi Ohtsuka
Kenichi Ohtsuka
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Electronic engineering
Flash memory
Threshold voltage
Dopant
Resist
2
Papers
1
Citations
0
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A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology
2011
IMW | International Memory Workshop
Sung-Yong Chung
Simon S. Chan
Kuo-Tung Chang
Bradley Marc Davis
Gulzar Kathawala
K. Ko
Sung-Chul Lee
Zhizheng Liu
Chuan Lin
Kenichi Ohtsuka
Sheung-Hee Park
Timothy Thurgate
Lei Xue
Mark Randolph
Hidehiko Shiraiwa
Y. Sun
C. Chang
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Optimization of Thick Resist in 90nm Mirror- Bit® Flash Memory to Improve Sector Edge Cell Threshold Voltage ISSM Paper: PO-P-225
2007
International Symposium on Semiconductor Manufacturing
James Jh Chen
Mark Randolph
M. Clopton
Stuart Brown
Easwar Dharmarajan
I. Burki
Kenichi Ohtsuka
John Guan
Nabil Yazdani
Hidehiko Shiraiwa
M. Lingunis
T. Kamal
O. Karlsson
Basab Banerjee
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