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Y. Sun
Y. Sun
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Electronic engineering
Computer science
Communication channel
Scaling
Parallel computing
4
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18
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Highly scalable and manufacturable heterogeneous charge trap NAND technology
2013
IMW | International Memory Workshop
Sameer Haddad
Shenqing Fang
Kuo-Tung Chang
S. Shetty
Chun Chen
Unsoon Kim
T. Fang
S. Ortiz
Timothy Thurgate
Mark T. Ramsbey
Inkuk Kang
M. Janai
J. Neo
P. K. Singh
G. Nagatani
A. Samqui
Rinji Sugino
Angela Hui
F. Tsai
S. Bell
David Matsumoto
C. Gabriel
Y. Sun
James Pak
S. Tehrani
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Advancement in Charge-Trap Flash memory technology
2013
IMW | International Memory Workshop
Saied Tehrani
James Pak
Mark Randolph
Y. Sun
Sameer Haddad
Eduardo Maayan
Yoram Betser
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Citations (13)
A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology
2011
IMW | International Memory Workshop
Sung-Yong Chung
Simon S. Chan
Kuo-Tung Chang
Bradley Marc Davis
Gulzar Kathawala
K. Ko
Sung-Chul Lee
Zhizheng Liu
Chuan Lin
Kenichi Ohtsuka
Sheung-Hee Park
Timothy Thurgate
Lei Xue
Mark Randolph
Hidehiko Shiraiwa
Y. Sun
C. Chang
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Novel Application of Monte Carlo Simulations for Improved Understanding of Transient Programming in SONOS Devices
2007
International Memory Workshop
Gulzar Kathawala
Timothy Thurgate
Zhizheng Liu
M. Kwan
Mark Randolph
Y. Sun
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Citations (3)
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