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Byung-hyug Roh
Byung-hyug Roh
Samsung
Leakage (electronics)
Electronic engineering
Transistor
Dram
Memory cell
3
Papers
9
Citations
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Improvement of data retention time using DRAM cell with metallic shield embedded (MSE)-STI for 90nm technology node and beyond
2003
ESSDERC | European Solid-State Device Research Conference
S.H. Lee
Soo-jin Hong
Jae-joon Oh
Yongjin Choi
D.I. Bae
Soon-yeon Park
Byung-hyug Roh
T.Y. Chung
Kinam Kim
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Citations (1)
Highly Extendible Memory Cell Architecture for Reliable Data Retention Time for 0.10mm Technology Node and beyond
2002
ESSDERC | European Solid-State Device Research Conference
J.H. Lee
Chang-hyun Cho
Sung-Hyuk Shin
J. W. Lee
K. Kwak
K. Y. Lee
Byung-hyug Roh
T.Y. Chung
Kyungryun Kim
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Highly manufacturable 90 nm DRAM technology
2002
IEDM | International Electron Devices Meeting
Yoon-Moon Park
C.H. Cho
K.H. Lee
Byung-hyug Roh
Y.S. Ahn
S.H. Lee
Jae-joon Oh
J.G. Lee
Dong-Hwa Kwak
Soo-Ho Shin
Jun-shik Bae
S.B. Kim
J.K. Lee
J.Y. Lee
Min Sang Kim
J. W. Lee
Dae-Yup Lee
Soo-jin Hong
D.I. Bae
Yoon-Soo Chun
Soon-yeon Park
C.J. Yun
T.Y. Chung
Kinam Kim
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Citations (6)
1