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S. C. Binari
S. C. Binari
Optoelectronics
Chemistry
Analytical chemistry
Electronic engineering
Cardiology
5
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24
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High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC
2003
IEEE Electron Device Letters
Gregg H. Jessen
R. Fitch
James K. Gillespie
G. D. Via
N. Moser
M.J. Yannuzzi
A. Crespo
J. Sewell
R. Dettmer
T. Jenkins
R. F. Davis
J. Yang
M. A. Khan
S. C. Binari
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Citations (15)
Wide-band semiconductors for high-power, high-frequency and high-temperature applications -- 1999. Materials Research Society symposium proceedings: Volume 572
1999
S. C. Binari
A.A. Burk
M.R. Melloch
C. Nguyen
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Citations (1)
Radiation Effects in GaAs Devices and ICs
1983
Journal of Vascular Surgery
W.T. Anderson
S. C. Binari
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Electric field distributions in planar transferred-electron devices measured with picosecond optical pulses
1982
IEEE Electron Device Letters
Thomas F. Carruthers
J. F. Weller
S. C. Binari
Phillip E. Thompson
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Citations (6)
Ge photocapacitive MIS infrared detectors
1979
Journal of Applied Physics
S. C. Binari
W. E. Miller
A. Sher
Y. H. Tsuo
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Citations (2)
1