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M.J. Yannuzzi
M.J. Yannuzzi
Air Force Research Laboratory
Electron mobility
Transistor
High-electron-mobility transistor
algan gan
Optoelectronics
3
Papers
27
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High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC
2003
IEEE Electron Device Letters
Gregg H. Jessen
R. Fitch
James K. Gillespie
G. D. Via
N. Moser
M.J. Yannuzzi
A. Crespo
J. Sewell
R. Dettmer
T. Jenkins
R. F. Davis
J. Yang
M. A. Khan
S. C. Binari
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Citations (15)
Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts
2003
IEEE Gallium Arsenide Integrated Circuit Symposium
Gregg H. Jessen
R. Fitch
James K. Gillespie
G. D. Via
N. Moser
M.J. Yannuzzi
A. Crespo
R. Dettmer
T. Jenkins
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Citations (8)
1