Old Web
English
Sign In
Acemap
>
authorDetail
>
Zhiqiang Tan
Zhiqiang Tan
Synopsys
Electronic engineering
Physics
Technology CAD
MOSFET
Boundary problem
3
Papers
6
Citations
0
KQI
Citation Trend
Filter By
Interval:
1900~2024
1900
2024
Author
Papers (3)
Sort By
Default
Most Recent
Most Early
Most Citation
No data
Journal
Conference
Others
3-D simulation of silicon oxidation: Challenges, progress and results
2013
SISPAD | International Conference on Simulation of Semiconductor Processes and Devices
Damrong Guoy
Alp H. Gencer
Zhiqiang Tan
Satish Chalasani
Mark Johnson
Luis Villablanca
S. Simeonov
Show All
Source
Cite
Save
Citations (1)
Investigation of Proximity Effects in a 6T SRAM Cell Using Three-Dimensional TCAD Simulations
2011
IEEE Transactions on Electron Devices
S. Simeonov
Ibrahim Avci
Pratheep Balasingam
Mark Johnson
Andrey Kucherov
Eugeny Lyumkis
U von Matt
K. El Sayed
A R Saha
Zhiqiang Tan
S. Tian
Luis Villablanca
B. Polsky
Show All
Source
Cite
Save
Citations (4)
Three-dimensional TCAD Process and Device Simulations
2006
BUGIMS | Biennial University/Government/Industry Microelectronics Symposium
Ibrahim Avci
Pratheep Balasingam
Karim El Sayed
J. Gharib
Mark Johnson
K. Kells
G. Kiralyfalvi
V. Koltyzhenkov
Andrey Kucherov
Eugeny Lyumkis
Oleg Penzin
B. Polsky
V. Rao
S. Simeonov
N. Strecker
Zhiqiang Tan
Luis Villablanca
W. Fichtner
Show All
Source
Cite
Save
Citations (1)
1