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W. Fichtner
W. Fichtner
Synopsys
Heterojunction
Field-effect transistor
Electronic engineering
Optoelectronics
Wide-bandgap semiconductor
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Three-dimensional TCAD Process and Device Simulations
2006
BUGIMS | Biennial University/Government/Industry Microelectronics Symposium
Ibrahim Avci
Pratheep Balasingam
Karim El Sayed
J. Gharib
Mark Johnson
K. Kells
G. Kiralyfalvi
V. Koltyzhenkov
Andrey Kucherov
Eugeny Lyumkis
Oleg Penzin
B. Polsky
V. Rao
S. Simeonov
N. Strecker
Zhiqiang Tan
Luis Villablanca
W. Fichtner
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Citations (1)
Simulation of Quasi-stationary and Transient Effects in GaN Based Heterostructure Field Effect Transistors
2006
BUGIMS | Biennial University/Government/Industry Microelectronics Symposium
Nelson Braga
R. Mickevicius
V. Rao
W. Fichtner
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Non-uniform stress effects in GaN based heterojunction field effect transistors
2005
CSICS | Compound Semiconductor Integrated Circuit Symposium
Nelson Braga
R. Mickevicius
V.S. Rao
W. Fichtner
R. Gaska
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Simulation of AlGaN/GaN Heterostructure Field Effect Transistors
2005
The Japan Society of Applied Physics
Nelson Braga
R. Mickevicius
W. Fichtner
R. Gaska
M. S. Shur
Grigory Simin
M. Asif Khan
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