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V. Koltyzhenkov
V. Koltyzhenkov
Synopsys
Condensed matter physics
Physics
Stress (mechanics)
Kinetic Monte Carlo
Monte Carlo method
4
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7
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0
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Anisotropic dopant diffusion in Si under stress using both continuum and atomistic methods
2008
IWCE | International Workshop on Computational Electronics
Ignacio Martin-Bragado
Ibrahim Avci
K. El Sayed
V. Koltyzhenkov
E. Lyumkis
Mark Johnson
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Anisotropic dopant diffusion in Si under stress using both continuum and atomistic methods
2008
Journal of Computational Electronics
Ignacio Martin-Bragado
Ibrahim Avci
K. El Sayed
V. Koltyzhenkov
Eugeny Lyumkis
Mark Johnson
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Citations (6)
Anisotropic dopant diffusion in Si under stress using both continuum and atomistic methods
2008
IWCE | International Workshop on Computational Electronics
Ignacio Martin-Bragado
Ibrahim Avci
K. El Sayed
V. Koltyzhenkov
E. Lyumkis
Mark Johnson
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Three-dimensional TCAD Process and Device Simulations
2006
BUGIMS | Biennial University/Government/Industry Microelectronics Symposium
Ibrahim Avci
Pratheep Balasingam
Karim El Sayed
J. Gharib
Mark Johnson
K. Kells
G. Kiralyfalvi
V. Koltyzhenkov
Andrey Kucherov
Eugeny Lyumkis
Oleg Penzin
B. Polsky
V. Rao
S. Simeonov
N. Strecker
Zhiqiang Tan
Luis Villablanca
W. Fichtner
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