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Kazuo Nojiri

Hitachi

9

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111

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High rate and highly selective anisotropic etching for WSix/poly‐Si using electron cyclotron resonance plasma

1996 Journal of Vacuum Science & Technology B
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Electron cyclotron resonance plasma etching of silicon dioxide for deep‐submicron ultralarge scale integrations

1995 Journal of Vacuum Science & Technology B
- Kazuo Nojiri
- Eri Iguchi
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Study of gate oxide breakdown caused by charge buildup during dry etching

1993 Journal of Vacuum Science & Technology B
- Kazuo Nojiri
- Kazuyuki Tsunokuni
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Citations (12)
Microwave Plasma Etching of Silicon Dioxide for Half-Micron ULSIs

1989 The Japan Society of Applied Physics
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The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching

1987 The Japan Society of Applied Physics
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A New Isolation Technology for VLSI

1985 The Japan Society of Applied Physics
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Citations (4)