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S. G. Croucher
S. G. Croucher
Materials science
Adsorption
Dodecane
Surface second harmonic generation
Reaction rate constant
4
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21
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SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars
2002
European Solid-State Device Research Conference
U N Straube
A.M. Waite
N.S. Lloyd
S. G. Croucher
Y.T. Tang
A G R Evans
T. J. Grasby
Maksym Myronov
T. E. Whall
E. H. C. Parker
D. J. Norris
T. Cullis
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Enhanced performance from SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10μm x 10μm Si Pillars
2002
The Japan Society of Applied Physics
A.M. Waite
U N Straube
N.S. Lloyd
S. G. Croucher
Y.T. Tang
B Rong
A G R Evans
T. J. Grasby
Maksym Myronov
Terry E. Whall
E. H. C. Parker
D. J. Norris
A. G. Cullis
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SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10um x 10um Pillars
2002
ESSDERC | European Solid-State Device Research Conference
U N Straube
A.M. Waite
N.S. Lloyd
S. G. Croucher
Y. Teng Tang
A G R Evans
T. J. Grasby
T. E. Whall
E. H. C. Parker
T. Norris
T. Cullis
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Surface second harmonic generation studies of the dodecane/water interface : the equilibrium and kinetic behaviour of p-nitrophenol and tri-n-butyl phosphate
2000
Physical Chemistry Chemical Physics
S. Haslam
S. G. Croucher
Christopher G. Hickman
Jeremy G. Frey
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Citations (21)
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