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SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars
SiGe pMOSFETs Fabricated on Novel SiGe Virtual Substrates Grown on 10 micro m x 10 micro m Pillars
2002
U N Straube
A.M. Waite
N.S. Lloyd
S. G. Croucher
Y.T. Tang
A G R Evans
T. J. Grasby
Maksym Myronov
T. E. Whall
E. H. C. Parker
D. J. Norris
T. Cullis
Keywords:
Optoelectronics
Materials science
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