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A. G. Cullis

University of Sheffield
University of St Andrews
Defence Research Agency

364

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13019

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Ultra-rapid solidification of transiently molten laser-annealed silicon

2020
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Microscopy of Semiconducting Materials, 1987

2020
- A. G. Cullis
- P. D. Augustus
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Microscopy of Semiconducting Materials, 1983

2020
- A. G. Cullis
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TEM studies of heteroepitaxial CdTe and Cd x Hg1−x Te layers grown on GaAs substrates by metal-organic chemical vapour deposition

2020
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Characterisation of In1–x Ga x As/InP heterostructures and superlattices grown by atmospheric pressure MOCVD

2020
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Composition determination in InGaAs/InP multilayer structures by X-ray microanalysis in a STEM

2020
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Transmission electron microscope studies of MOS silicon device structures

2020
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Nano-clustering anomalies in InGaN/GaN multiple quantum well structures

2018
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FEGTEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD

2018
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Investigation of microstructural evolution during the growth of epitaxial GaN by correlated in situ optical monitoring, TEM and AFM techniques

2018
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