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G. B. Rayner
G. B. Rayner
Chemistry
Electronic engineering
Auger electron spectroscopy
Atomic layer deposition
Inorganic chemistry
5
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64
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Performance enhancement of InAsSb QW-MOSFETs with in-situ H 2 plasma cleaning for gate stack formation
2015
DRC | Device Research Conference
Michael Barth
G. B. Rayner
S. Mack
Brian R. Bennett
Suman Datta
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Citations (1)
In Situ Process Control of Trilayer Gate-Stacks on p-Germanium With 0.85-nm EOT
2015
IEEE Electron Device Letters
Yuanxia Zheng
Ashish Agrawal
G. B. Rayner
Michael Barth
K. Ahmed
Suman Datta
Roman Engel-Herbert
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Citations (9)
Enhancement mode strained (1.3%) germanium quantum well FinFET (W Fin =20nm) with high mobility (μ Hole =700 cm 2 /Vs), low EOT (∼0.7nm) on bulk silicon substrate
2014
IEDM | International Electron Devices Meeting
Ashish Agrawal
Michael Barth
G. B. Rayner
V. T. Arun
Chad M. Eichfeld
Guy P. Lavallee
Shih-Ying Yu
X. Sang
S. Brookes
Yuanxia Zheng
Yi-Jing Lee
Y. R. Lin
C.-H. Wu
Chih-Hsin Ko
James M. LeBeau
Roman Engel-Herbert
Suzanne E. Mohney
Yee-Chia Yeo
Suman Datta
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Citations (2)
Molybdenum Atomic Layer Deposition Using MoF6 and Si2H6 as the Reactants
2011
Chemistry of Materials
Dragos Seghete
G. B. Rayner
Andrew S. Cavanagh
Virginia R. Anderson
Steven M. George
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Citations (34)
Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
2009
Journal of Vacuum Science and Technology
G. B. Rayner
S. M. George
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Citations (18)
1