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M. Baudet

Centre national d'études des télécommunications

13

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162

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Non-equivalence of direct and reverse interfaces in AlAs-GaAs superlattice structures as evidenced by X-ray diffraction

1993 Journal of Crystal Growth
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Comparative study of interface structure in GaAs/AlAs superlattices grown by molecular beam epitaxy on (001) GaAs substrates misoriented towards (111)Ga or (111)As plane

1992 Applied Physics Letters
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Interface roughness of GaAs/AlAs superlattices MBE-grown on vicinal surfaces

1991 Applied Surface Science
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The use of superlattices as internal standards for composition and thickness measurements in modulation-doped quantum well structures

1990 Journal of Crystal Growth
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High field transport in GaAs/GaAlAs multiquantum wells: Theory and experiment

1990 Superlattices and Microstructures
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Caractérisation par diffraction X des superréseaux GaAlAs-GaAs. Importance des techniques et de la procédure utilisées

1989
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X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substrates

1989 Journal of Crystal Growth
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Structural features of MBE grown very short period GaAs-AlAs superlattices

1988 Journal of Crystal Growth
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Temperature dependence of electron mobility in GaAs-Ga1−xAlxAs modulation-doped quantum wells

1987 Physical Review B
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AN X-RAY DIFFRACTION STUDY OF DISORDER IN GaAlAs-GaAs SUPERLATTICES

1987 Le Journal De Physique Colloques
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