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Temperature dependence of electron mobility in GaAs-Ga1−xAlxAs modulation-doped quantum wells
Temperature dependence of electron mobility in GaAs-Ga1−xAlxAs modulation-doped quantum wells
1987
C. Guillemot
M. Baudet
M. Gauneau
A. Regreny
Portal Jc
Keywords:
Electron mobility
Secondary ion mass spectrometry
Doping
Atomic physics
Nuclear magnetic resonance
Quantum well
Modulation
Physics
Condensed matter physics
Correction
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