Interface roughness of GaAs/AlAs superlattices MBE-grown on vicinal surfaces

Abstract The interface morphology of GaAs/AlAs superlattices grown by molecular beam epitaxy on misoriented (001) GaAs substrates has been investigated using X-ray diffraction techniques in addition to high-resolution transmission electron microscopy (HRTEM). We observe that the width and intensity of the satellite peaks are very sensitive to the step-edge orientation. Among the investigated ones ([ 1 110], [100], [110]), it is the [ 1 10] step-edge direction which is the most favourable to a regular growth of superlattice structures. Structural models based on HRTEM observations (step distribution at interfaces and local fluctuation of layer thickness) have been constructed, allowing an explanation of the X-ray diagrams.