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Shashank Sharma

Applied Materials

19

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150

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p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing

2019 IEEE Electron Device Letters
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Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices

2018 IEDM | International Electron Devices Meeting
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Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures

2017 VLSIT | Symposium on VLSI Technology
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PMOS contact resistance solution compatible to CMOS integration for 7 nm node and beyond

2016 VLSIT | Symposium on VLSI Technology
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NMOS contact engineering for CMOS scaling

2015 IWJT | International Workshop on Junction Technology
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Selenium segregation optimization for 10 nm node contact resistivity

2014 VLSIT | Symposium on VLSI Technology
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Damage engineered Se implant for NMOS TiSi x contact resistivity reduction

2014
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Selective Epitaxial Si:P Film for nMOSFET Application: High Phosphorous Concentration and High Tensile Strain

2014
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Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10 −9 Ω-cm 2 using ultrathin TiO 2−x interlayer between metal and silicon

2013 VLSIT | Symposium on VLSI Technology
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Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies

2013 Solid-state Electronics
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Citations (13)