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P. Benoit
P. Benoit
STMicroelectronics
Flicker noise
Bipolar junction transistor
Infrasound
Transistor
Common emitter
3
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3
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Impact of Technological Parameters on the Low Frequency Noise of Advanced Heterojunction Bipolar Transistors
2007
ICNF | International Conference on Noise and Fluctuations
F. Pascal
J. Raoult
C. Delseny
P. Benoit
M. Marin
M.J. Deen
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Influence of Carbon Incorporation on the Low Frequency Noise of Si/SiGe:C HBTs based on 0.25 μm BiCMOS Technology
2005
ICNF | International Conference on Noise and Fluctuations
P. Benoit
J. Raoult
C. Delseny
F. Pascal
J. C. Vildeuil
B. Szelag
A. Monroy
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Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors
2005
Microelectronics Reliability
P. Benoit
J. Raoult
C. Delseny
F. Pascal
L. Snadny
J. C. Vildeuil
M. Marin
Bertrand Martinet
Denis Cottin
Olivier Noblanc
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