Influence of Carbon Incorporation on the Low Frequency Noise of Si/SiGe:C HBTs based on 0.25 μm BiCMOS Technology

We studied the influence of carbon concentration on the low frequency noise (LFN) of Si/SiGe:C Heterojunction Bipolar Transistors (HBTs). For low and medium concentrations, the same level and evolution of 1/f noise versus bias and geometry is observed. The associated figure of merit, Kb, is closed to 4.10−9μm2. In this case, noise is mainly generated in the intrinsic transistor at the emitter‐base junction. At higher carbon concentration, degradation of the DC and LFN parameter is observed.