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Marie-Anne Jaud

University of Grenoble

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Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors

2021 Journal of Applied Physics
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A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs

2020 IEDM | International Electron Devices Meeting
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