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François Triozon
François Triozon
University of Grenoble
Computational physics
MOSFET
CMOS
Physics
Capacitance
3
Papers
4
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0
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Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors
2021
Journal of Applied Physics
Bledion Rrustemi
Marie-Anne Jaud
François Triozon
Clémentine Piotrowicz
William Vandendaele
Charles Leroux
Cyrille Le Royer
Jérôme Biscarrat
Gerard Ghibaudo
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Poisson-Schrödinger simulation and analytical modeling of inversion charge in FDSOI MOSFET down to 0 K – Towards compact modeling for cryo CMOS application
2021
Solid-state Electronics
M. Aouad
Thierry Poiroux
Sebastien Martinie
François Triozon
Maud Vinet
Gerard Ghibaudo
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Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application
2020
EUROSOI-ULIS | Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
M. Aouad
Sebastien Martinie
François Triozon
Thierry Poiroux
M. Vinet
Gérard Ghibaudo
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Citations (4)
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