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Y. Weber

Centre national de la recherche scientifique

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A New Optimized 200V Low On-Resistance Power FLYMOSFET

2008 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Characterisation of P floating islands for 150-200 V FLYMOSFETs

2007 Iet Circuits Devices & Systems
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Performances dynamiques des transistors FLYMOSTM 65 Volts à canal N

2006
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Electrical and Physical Characterization of 150-200V FLYMOSFETs

2006 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Citations (4)