Electrical and Physical Characterization of 150-200V FLYMOSFETs

A vertical n-channel 150V-200V FLYMOSFET is proposed in this work for the first time. Initially, spreading resistance profiling, scanning capacitance microscopy and process simulation are used to provide an accurate 1D and 2D device physical characterization. Concerning the electrical study, FLYMOSFET measurements show superior R on S-BV dss trade-off in comparison with the conventional power MOSFET and improved UIS ruggedness in front of the super junction MOSFET