A New Optimized 200V Low On-Resistance Power FLYMOSFET

Nowadays, the "on-resistance" reduction is key factor in the evolution of power devices, especially in power MOSFETs technology. In that way, innovating structures such as superjunction (SJ) [1] or floating islands (FI) [2, 3, 4] devices have been developed. Previously, a vertical N-channel FLYMOSFET, including one level of P buried layers called floating islands (introduced in the N-epitaxial region), has been successfully developed [5, 6]. In this paper, new design and process improvements provide for the first time a FLYMOSFET with two levels of FI exhibiting a low specific on-resistance (R ON -S) of 4.5 mOmega.cm 2 in 200 V breakdown voltage (BV dss ) range which breaks the silicon limit [7]. Furthermore, a full physical and electrical characterization is presented, especially in dynamic configuration to evaluate FLYMOSFET's performances. Then a manufactured 200 V SJ product from another company is analyzed and compared to it. FLYMOSFET appears as a good alternative to 200 V SJ devices.