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K. Rammohan

University of Southern California

16

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152

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Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique

1997 Applied Physics Letters
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Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/AlxGa1−xAs quantum wells

1996 Journal of Vacuum Science & Technology B
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Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

1995 MRS Proceedings
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Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1−xAs/GaAs

1995 Journal of Vacuum Science & Technology B
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Influence of misfit dislocations on thermal quenching of luminescence in InxGa1−xAs/GaAs multiple quantum wells

1995 Journal of Applied Physics
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RELAXATION-INDUCED POLARIZED LUMINESCENCE FROM INXGA1-XAS FILMS GROWN ON GAAS(001)

1995 Physical Review B
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Study of μm‐scale spatial variations in strain of a compositionally step‐graded InxGa1−xAs/GaAs(001) heterostructure

1995 Applied Physics Letters
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The Relationship between InGaAs Channel Layer Thickness and Device Performance in High Electron Mobility Transistors

1994 MRS Proceedings
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Ambipolar diffusion anisotropy induced by defects in nipi‐doped In0.2Ga0.8As/GaAs multiple quantum wells

1994 Applied Physics Letters
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Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions

1994 MRS Proceedings
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Citations (1)