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H. Noji
H. Noji
Toshiba
Electronic engineering
Engineering
Dynamic random-access memory
Capacitor
Control engineering
3
Papers
54
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A 500-megabyte/s data-rate 4.5 M DRAM
1993
IEEE Journal of Solid-state Circuits
Natsuki Kushiyama
Shigeo Ohshima
D. Stark
H. Noji
Kiyofumi Sakurai
Satoru Takase
Tohru Furuyama
Richard M. Barth
Andy Chan
John B. Dillon
James A. Gasbarro
Matthew Murdy Griffin
Mark Horowitz
Thomas H. Lee
Victor E. Lee
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Citations (41)
Wafer burn-in (WBI) technology for RAM's
1993
IEDM | International Electron Devices Meeting
Tohru Furuyama
Natsuki Kushiyama
H. Noji
M. Kataoka
T. Yoshida
S. Doi
M. Ezawa
T. Watanabe
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Citations (11)
Soft Error Rate Reduction in Dynamic Memory with Trench Capacitor Cell
1986
IRPS | International Reliability Physics Symposium
H. Ishiuchi
T. Watanabe
T. Tanaka
K. Kishi
M. Ishikawa
N. Goto
K. Kohyama
H. Noji
O. Ozawa
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Citations (2)
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