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Nour-Eddine Bourzgui
Nour-Eddine Bourzgui
Lille University of Science and Technology
Analytical chemistry
algan gan
gas concentration
Transistor
Engineering
2
Papers
4
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0
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2024
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A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
2020
IEEE Transactions on Electron Devices
S. J. Duffy
Brahim Benbakhti
Wei Dong Zhang
K. Ahmeda
Karol Kalna
M. Boucherta
M. Mattalah
Hassane Ouazzani Chahdi
Nour-Eddine Bourzgui
Ali Soltani
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Citations (4)
Sensors based on AlGaN/GaN HEMT for fast H 2 and O 2 detection and measurement at high temperature
2019
SENSORS | IEEE Sensors
Hassane Ouazzani Chahdi
Abdallah Ougazzaden
Jean-Paul Salvestrini
Hassan Maher
Ali Soltani
Omar Helli
Nour-Eddine Bourzgui
Leo Breuil
David Danovitch
Paul L. Voss
Suresh Sundaram
Vincent Aubry
Yacine Halfaya
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